Datasheet SI2316BDS-T1-GE3 - Vishay N CHANNEL MOSFET, 30 V, 4.5 A, TO-236 — Datenblatt

Detaillierte Beschreibung

Manufacturer: Vishay

Description: N CHANNEL MOSFET, 30 V, 4.5 A, TO-236

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Docket:
Si2316BDS
Vishay Siliconix
N-Channel 30-V (D-S) MOSFET
FEATURES PRODUCT SUMMARY
VDS (V) 30 RDS(on) () 0.050 at VGS = 10 V 0.080 at VGS = 4.5 V ID (A)a 4.5 3.16 nC 3.4 Qg (Typ)

Simulation Model

Specifications:

• Continuous Drain Current Id: 4.5 A
• Drain Source Voltage Vds: 30 V
• On Resistance Rds(on): 80 MOhm
• Rds(on) Test Voltage Vgs: 20 V
• Threshold Voltage Vgs Typ: 3 V
• Transistor Polarity: N Channel

RoHS: Yes

Andere Namen:

SI2316BDST1GE3, SI2316BDS T1 GE3