Datasheet SI2312BDS-T1-E3 - Vishay MOSFET, N, SOT-23 — Datenblatt

Detaillierte Beschreibung

Manufacturer: Vishay

Description: MOSFET, N, SOT-23

Specifications:

• Base Number: 2312
• Continuous Drain Current Id: 3.9 A
• Current Id Max: 5 A
• Drain Source Voltage Vds: 20 V
• Mounting Type: SMD
• Number of Pins: 3
• On Resistance Rds(on): 47 MOhm
• Package / Case: SOT-23
• Power Dissipation Pd: 750µ W
• Pulse Current Idm: 15 A
• Rds(on) Test Voltage Vgs: 4.5 V
• SMD Marking: M2
• Threshold Voltage Vgs Typ: 850 mV
• Transistor Case Style: SOT-23
• Transistor Polarity: N Channel
• Voltage Vds Typ: 20 V
• Voltage Vgs Max: 850 mV
• Voltage Vgs Rds on Measurement: 4.5 V
• Voltage Vgs th Max: 0.85 V
• Voltage Vgs th Min: 0.45 V

RoHS: Yes

Andere Namen:

SI2312BDST1E3, SI2312BDS T1 E3