Datasheet SI2306BDS-T1-GE3 - Vishay N CHANNEL MOSFET, 30 V, 4 A, TO-236 — Datenblatt

Detaillierte Beschreibung

Manufacturer: Vishay

Description: N CHANNEL MOSFET, 30 V, 4 A, TO-236

Simulation Model

Specifications:

• Continuous Drain Current Id: 4 A
• Drain Source Voltage Vds: 30 V
• On Resistance Rds(on): 65 MOhm
• Rds(on) Test Voltage Vgs: 20 V
• Threshold Voltage Vgs Typ: 3 V
• Transistor Polarity: N Channel

RoHS: Yes

Andere Namen:

SI2306BDST1GE3, SI2306BDS T1 GE3