Datasheet SI2304BDS-T1-GE3 - Vishay N CHANNEL MOSFET, 30 V, 3.2 A, TO-236 — Datenblatt

Detaillierte Beschreibung

Manufacturer: Vishay

Description: N CHANNEL MOSFET, 30 V, 3.2 A, TO-236

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Docket:
Si2304BDS
Vishay Siliconix
N-Channel 30-V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V) 30 RDS(on) () 0.070 at VGS = 10 V 0.105 at VGS = 4.5 V ID (A) 3.2 2.6 Qg (Typ.) 2.6

Simulation Model

Specifications:

• Continuous Drain Current Id: 3.2 A
• Drain Source Voltage Vds: 30 V
• On Resistance Rds(on): 0.105 Ohm
• Rds(on) Test Voltage Vgs: 20 V
• Threshold Voltage Vgs Typ: 3 V
• Transistor Polarity: N Channel

RoHS: Yes

Andere Namen:

SI2304BDST1GE3, SI2304BDS T1 GE3