Datasheet SI2302ADS-T1-GE3 - Vishay N CH MOSFET — Datenblatt

Detaillierte Beschreibung

Manufacturer: Vishay

Description: N CH MOSFET

Specifications:

• Continuous Drain Current Id: 2.1 A
• Drain Source Voltage Vds: 20 V
• On Resistance Rds(on): 45 MOhm
• Power Dissipation Pd: 700 mW
• Rds(on) Test Voltage Vgs: 4.5 V
• Threshold Voltage Vgs Typ: 950 mV
• Transistor Polarity: N Channel

RoHS: Yes

Andere Namen:

SI2302ADST1GE3, SI2302ADS T1 GE3