Datasheet SIR890DP-T1-E3 - Vishay MOSFET, N, SO-8 — Datenblatt

Detaillierte Beschreibung

Manufacturer: Vishay

Description: MOSFET, N, SO-8

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Docket:
New Product
SiR890DP
Vishay Siliconix
N-Channel 20-V (D-S) MOSFET
PRODUCT SUMMARY

Specifications:

• Continuous Drain Current Id: 50 A
• Current Id Max: 30 A
• Drain Source Voltage Vds: 20 V
• Junction Temperature Tj Max: 150°C
• Mounting Type: SMD
• Number of Pins: 8
• On Resistance Rds(on): 2.9 MOhm
• Operating Temperature Range: -55°C to +150°C
• Package / Case: PowerPAK
• Power Dissipation: 5 W
• Rds(on) Test Voltage Vgs: 10 V
• Rise Time: 18 ns
• SVHC: No SVHC (20-Jun-2011)
• Transistor Case Style: PowerPAK SO
• Transistor Polarity: N Channel
• Voltage Vds Typ: 20 V
• Voltage Vgs Max: 20 V
• Voltage Vgs Rds on Measurement: 10 V
• Voltage Vgs th Max: 2.6 V
• Voltage Vgs th Min: 1 V

RoHS: Yes

Andere Namen:

SIR890DPT1E3, SIR890DP T1 E3