Datasheet SIR882DP-T1-GE3 - Vishay MOSFET, N CH, DIODE, 100 V, 60 A, PPAKSO8 — Datenblatt

Detaillierte Beschreibung

Manufacturer: Vishay

Description: MOSFET, N CH, DIODE, 100 V, 60 A, PPAKSO8

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Docket:
New Product
SiR882DP
Vishay Siliconix
N-Channel 100 V (D-S) MOSFET
PRODUCT SUMMARY

Specifications:

• Current Id Max: 17.6 A
• Drain Source Voltage Vds: 100 V
• Number of Pins: 8
• On State Resistance: 7100µ Ohm
• Operating Temperature Range: -55°C to +150°C
• Power Dissipation Pd: 5.4 W
• Rds(on) Test Voltage Vgs: 10 V
• Transistor Case Style: SOIC PowerPAK
• Transistor Polarity: N Channel
• Voltage Vgs Max: 20 V

RoHS: Yes

Accessories:

• Analog Devices - ADP3623ARDZ-RL
• Fischer Elektronik - FK 244 13 D2 PAK

Andere Namen:

SIR882DPT1GE3, SIR882DP T1 GE3