Datasheet SIHP18N50C-E3В  - Vishay MOSFET, N CH, W DIO, 500 V, 18 A, TO220AB — Datenblatt

Detaillierte Beschreibung

Manufacturer: Vishay

Description: MOSFET, N CH, W DIO, 500 V, 18 A, TO220AB

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Docket:
SiHP18N50C
Vishay Siliconix
Power MOSFET
PRODUCT SUMMARY
VDS (V) at TJ max.

RDS(on) () Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration VGS = 10 V 76 21 29 Single

Specifications:

• Continuous Drain Current Id: 18 A
• Drain Source Voltage Vds: 500 V
• Number of Pins: 3
• On State Resistance: 0.225 Ohm
• Operating Temperature Range: -55°C to +150°C
• Power Dissipation Pd: 223 W
• Rds(on) Test Voltage Vgs: 10 V
• Transistor Case Style: TO-220
• Transistor Polarity: N Channel
• Voltage Vgs Max: 30 V

RoHS: Yes

Andere Namen:

SIHP18N50CE3В , SIHP18N50C E3В