Datasheet SIHP12N50C-E3 - Vishay MOSFET, N CH, DIODE, 500 V, 12 A, TO-220AB — Datenblatt
Part Number: SIHP12N50C-E3
Detaillierte Beschreibung
Manufacturer: Vishay
Description: MOSFET, N CH, DIODE, 500 V, 12 A, TO-220AB
Docket:
SiHP12N50C, SiHB12N50C, SiHF12N50C
Vishay Siliconix
Power MOSFET
PRODUCT SUMMARY
VDS (V) at TJ max.
RDS(on) () Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration
Specifications:
- Current Id Max: 12 A
- Drain Source Voltage Vds: 500 V
- Number of Pins: 3
- On State Resistance: 0.46 Ohm
- Operating Temperature Range: -55°C to +150°C
- Power Dissipation Pd: 208 W
- Rds(on) Test Voltage Vgs: 10 V
- Transistor Case Style: TO-220AB
- Transistor Polarity: N Channel
- Voltage Vgs Max: 30 V
RoHS: Yes
Accessories:
- Analog Devices - ADP3623ARDZ-RL
- MULTICORE (SOLDER) - 1399075-M
Andere Namen:
SIHP12N50CE3, SIHP12N50C E3