Datasheet SI7882DP-T1-E3 - Vishay MOSFET, N, 8-SOIC — Datenblatt

Detaillierte Beschreibung

Manufacturer: Vishay

Description: MOSFET, N, 8-SOIC

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Docket:
Si7882DP
Vishay Siliconix
N-Channel Reduced Qg, Fast Switching MOSFET
PRODUCT SUMMARY
VDS (V) 12 RDS(on) () 0.0055 at VGS = 4.5 V 0.008 at VGS = 2.5 V ID (A) 22 18

Specifications:

• Continuous Drain Current Id: 22 A
• Current Id Max: 13 A
• Drain Source Voltage Vds: 12 V
• Mounting Type: SMD
• Number of Pins: 8
• On Resistance Rds(on): 5.5 MOhm
• Package / Case: SOIC
• Power Dissipation: 5 W
• Rds(on) Test Voltage Vgs: 4.5 V
• Threshold Voltage Vgs Typ: 1.4 V
• Transistor Case Style: SOIC
• Transistor Polarity: N Channel
• Voltage Vds Typ: 12 V
• Voltage Vgs Max: 1.4 V
• Voltage Vgs Rds on Measurement: 4.5 V

RoHS: Y-Ex

Andere Namen:

SI7882DPT1E3, SI7882DP T1 E3