Datasheet SI7846DP-T1-E3 - Vishay MOSFET TRANSISTOR — Datenblatt

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Manufacturer: Vishay

Description: MOSFET TRANSISTOR

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Docket:
Si7846DP
Vishay Siliconix
N-Channel 150-V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V) 150 RDS(on) () 0.050 at VGS = 10 V ID (A) 6.7

Specifications:

• Continuous Drain Current Id: 6.7 A
• Current Id Max: 24.5 A
• Drain Source Voltage Vds: 150 V
• Number of Pins: 8
• On State Resistance: 50 MOhm
• Operating Temperature Range: -55°C to +150°C
• Package / Case: SOIC-8
• Power Dissipation Pd: 1.9 W
• Rds(on) Test Voltage Vgs: 10 V
• Transistor Case Style: SOIC
• Transistor Polarity: N Channel
• Voltage Vds Typ: 150 V
• Voltage Vgs Max: 20 V
• Voltage Vgs Rds on Measurement: 10 V

RoHS: Yes

Andere Namen:

SI7846DPT1E3, SI7846DP T1 E3