Datasheet SI7772DP-T1-GE3 - Vishay N CHANNEL MOSFET, 30 V, 35.6 A — Datenblatt

Detaillierte Beschreibung

Manufacturer: Vishay

Description: N CHANNEL MOSFET, 30 V, 35.6 A

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Docket:
New Product
Si7772DP
Vishay Siliconix
N-Channel 30-V (D-S) MOSFET with Schottky Diode
PRODUCT SUMMARY

Specifications:

• Continuous Drain Current Id: 35.6 A
• Drain Source Voltage Vds: 30 V
• On Resistance Rds(on): 0.013 Ohm
• Rds(on) Test Voltage Vgs: 10 V
• Threshold Voltage Vgs Typ: 2.5 V
• Transistor Polarity: N Channel

RoHS: Yes

Andere Namen:

SI7772DPT1GE3, SI7772DP T1 GE3