Datasheet SI7120DN-T1-GE3 - Vishay MOSFET, N, PPAK1212 — Datenblatt

Detaillierte Beschreibung

Manufacturer: Vishay

Description: MOSFET, N, PPAK1212

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Docket:
Si7120DN
Vishay Siliconix
N-Channel 60-V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V) 60 RDS(on) () 0.019 at VGS = 10 V 0.028 at VGS = 4.5 V ID (A) 10 8.2

Specifications:

• Continuous Drain Current Id: 10 A
• Current Id Max: 6.3 A
• Drain Source Voltage Vds: 60 V
• Junction Temperature Tj Max: 150°C
• Mounting Type: SMD
• Number of Pins: 8
• On Resistance Rds(on): 19 MOhm
• Operating Temperature Range: -55°C to +150°C
• Package / Case: PowerPAK
• Power Dissipation: 1.5 W
• Rds(on) Test Voltage Vgs: 10 V
• Rise Time: 12 ns
• SVHC: No SVHC (20-Jun-2011)
• Threshold Voltage Vgs Typ: 2.5 V
• Transistor Case Style: PowerPAK 1212
• Transistor Polarity: N Channel
• Voltage Vds Typ: 60 V
• Voltage Vgs Max: 20 V
• Voltage Vgs Rds on Measurement: 10 V
• Voltage Vgs th Max: 3.5 V
• Voltage Vgs th Min: 1.5 V

RoHS: Y-Ex

Andere Namen:

SI7120DNT1GE3, SI7120DN T1 GE3