Datasheet SI7120ADN-T1-GE3 - Vishay MOSFET, N CH, DIODE, 60 V, 9.5 A, 12128PPAK — Datenblatt
Part Number: SI7120ADN-T1-GE3
Detaillierte Beschreibung
Manufacturer: Vishay
Description: MOSFET, N CH, DIODE, 60 V, 9.5 A, 12128PPAK
Docket:
New Product
Si7120ADN
Vishay Siliconix
N-Channel 60 V (D-S) MOSFET
PRODUCT SUMMARY
Specifications:
- Current Id Max: 9.5 A
- Drain Source Voltage Vds: 60 V
- Number of Pins: 8
- On State Resistance: 17500µ Ohm
- Operating Temperature Range: -55°C to +150°C
- Power Dissipation Pd: 3.8 W
- Rds(on) Test Voltage Vgs: 10 V
- Transistor Case Style: PowerPAK 1212
- Transistor Polarity: N Channel
- Voltage Vgs Max: 20 V
RoHS: Yes
Accessories:
- Analog Devices - ADP3623ARDZ-RL
- Electrolube - SMA10SL
Andere Namen:
SI7120ADNT1GE3, SI7120ADN T1 GE3