Datasheet SI7120ADN-T1-GE3 - Vishay MOSFET, N CH, DIODE, 60 V, 9.5 A, 12128PPAK — Datenblatt

Vishay SI7120ADN-T1-GE3

Part Number: SI7120ADN-T1-GE3

Detaillierte Beschreibung

Manufacturer: Vishay

Description: MOSFET, N CH, DIODE, 60 V, 9.5 A, 12128PPAK

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Docket:
New Product
Si7120ADN
Vishay Siliconix
N-Channel 60 V (D-S) MOSFET
PRODUCT SUMMARY

Specifications:

  • Current Id Max: 9.5 A
  • Drain Source Voltage Vds: 60 V
  • Number of Pins: 8
  • On State Resistance: 17500µ Ohm
  • Operating Temperature Range: -55°C to +150°C
  • Power Dissipation Pd: 3.8 W
  • Rds(on) Test Voltage Vgs: 10 V
  • Transistor Case Style: PowerPAK 1212
  • Transistor Polarity: N Channel
  • Voltage Vgs Max: 20 V

RoHS: Yes

Accessories:

  • Analog Devices - ADP3623ARDZ-RL
  • Electrolube - SMA10SL

Andere Namen:

SI7120ADNT1GE3, SI7120ADN T1 GE3