Datasheet SI4850EY-T1-E3 - Vishay MOSFET, N, 8-SOIC — Datenblatt

Detaillierte Beschreibung

Manufacturer: Vishay

Description: MOSFET, N, 8-SOIC

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Docket:
Si4850EY
Vishay Siliconix
N-Channel Reduced Qg, Fast Switching MOSFET
PRODUCT SUMMARY
VDS (V) 60 RDS(on) () 0.022 at VGS = 10 V 0.031 at VGS = 4.5 V ID (A) 8.5 7.2

Specifications:

• Continuous Drain Current Id: 8.5 A
• Current Id Max: 8.5 A
• Drain Source Voltage Vds: 60 V
• Mounting Type: SMD
• Number of Pins: 8
• On Resistance Rds(on): 22 MOhm
• Package / Case: SOIC
• Power Dissipation: 1.7 W
• Rds(on) Test Voltage Vgs: 10 V
• Threshold Voltage Vgs Typ: 3 V
• Transistor Case Style: SOIC
• Transistor Polarity: N Channel
• Voltage Vds Typ: 60 V
• Voltage Vgs Max: 3 V
• Voltage Vgs Rds on Measurement: 10 V

RoHS: Yes

Andere Namen:

SI4850EYT1E3, SI4850EY T1 E3