Datasheet SI4840BDY-T1-E3 - Vishay MOSFET, N, SO-8 — Datenblatt

Detaillierte Beschreibung

Manufacturer: Vishay

Description: MOSFET, N, SO-8

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Docket:
Si4840BDY
Vishay Siliconix
N-Channel 40-V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V) 40 RDS(on) () 0.009 at VGS = 10 V 0.012 at VGS = 4.5 V ID (A)d 19 15 nC 16 Qg (Typ.)

Specifications:

• Continuous Drain Current Id: 19 A
• Current Id Max: 12.4 A
• Drain Source Voltage Vds: 40 V
• Junction Temperature Tj Max: 150°C
• Mounting Type: SMD
• Number of Pins: 8
• On Resistance Rds(on): 9 MOhm
• Operating Temperature Range: -55°C to +150°C
• Package / Case: SOIC-8
• Power Dissipation: 6 W
• Rds(on) Test Voltage Vgs: 10 V
• Rise Time: 150 ns
• SVHC: No SVHC (20-Jun-2011)
• Transistor Case Style: SOIC
• Transistor Polarity: N Channel
• Voltage Vds Typ: 40 V
• Voltage Vgs Max: 20 V
• Voltage Vgs Rds on Measurement: 10 V
• Voltage Vgs th Max: 3 V
• Voltage Vgs th Min: 1 V

RoHS: Yes

Andere Namen:

SI4840BDYT1E3, SI4840BDY T1 E3