Datasheet SI4442DY-T1-E3 - Vishay TRANSISTOR, MOSFET — Datenblatt

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Manufacturer: Vishay

Description: TRANSISTOR, MOSFET

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Docket:
Si4442DY
Vishay Siliconix
N-Channel 30-V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V) 30 RDS(on) () 0.0045 at VGS = 10 V 0.005 at VGS = 4.5 V 0.0075 at VGS = 2.5 V ID (A) 22 19 17

Specifications:

• Continuous Drain Current Id: 22 A
• Current Id Max: 22 A
• Drain Source Voltage Vds: 30 V
• Mounting Type: SMD
• Number of Pins: 8
• On Resistance Rds(on): 4.5 MOhm
• Operating Temperature Range: -55°C to +150°C
• Package / Case: SOIC
• Power Dissipation: 3.5 W
• Rds(on) Test Voltage Vgs: 10 V
• Threshold Voltage Vgs Typ: 1.5 V
• Transistor Case Style: SOIC
• Transistor Polarity: N Channel
• Voltage Vds Typ: 30 V
• Voltage Vgs Max: 1.5 V
• Voltage Vgs Rds on Measurement: 10 V

RoHS: Y-Ex

Andere Namen:

SI4442DYT1E3, SI4442DY T1 E3