Datasheet SI2334DS-T1-GE3 - Vishay MOSFET, N CH, 30 V, 4.9 A, DIODE, SOT23 — Datenblatt
Part Number: SI2334DS-T1-GE3
Detaillierte Beschreibung
Manufacturer: Vishay
Description: MOSFET, N CH, 30 V, 4.9 A, DIODE, SOT23
Docket:
New Product
Si2334DS
Vishay Siliconix
N-Channel 30 V (D-S) MOSFET
PRODUCT SUMMARY
Specifications:
- Current Id Max: 4.2 A
- Drain Source Voltage Vds: 30 V
- Number of Pins: 3
- On State Resistance: 0.035 Ohm
- Operating Temperature Range: -55°C to +150°C
- Power Dissipation Pd: 1.3 W
- Rds(on) Test Voltage Vgs: 4.5 V
- Transistor Case Style: SOT-23
- Transistor Polarity: N Channel
- Voltage Vgs Max: 8 V
RoHS: Yes
Accessories:
- Analog Devices - ADP3623ARDZ-RL
Andere Namen:
SI2334DST1GE3, SI2334DS T1 GE3