Datasheet SI2314EDS-T1-E3 - Vishay MOSFET, N, TO-236 — Datenblatt
Part Number: SI2314EDS-T1-E3
Detaillierte Beschreibung
Manufacturer: Vishay
Description: MOSFET, N, TO-236
Specifications:
- Continuous Drain Current Id: 4.9 A
- Current Id Max: 4.9 A
- Drain Source Voltage Vds: 20 V
- Mounting Type: SMD
- Number of Pins: 3
- On Resistance Rds(on): 33 MOhm
- Package / Case: TO-236
- Power Dissipation: 750 mW
- Rds(on) Test Voltage Vgs: 4.5 V
- Threshold Voltage Vgs Typ: 950 mV
- Transistor Case Style: TO-236
- Transistor Polarity: N Channel
- Voltage Vds Typ: 20 V
- Voltage Vgs Max: 950 mV
- Voltage Vgs Rds on Measurement: 4.5 V
RoHS: Yes
Andere Namen:
SI2314EDST1E3, SI2314EDS T1 E3