Datasheet SI2302ADS-T1-E3 - Vishay MOSFET, N, SOT-23 — Datenblatt

Detaillierte Beschreibung

Manufacturer: Vishay

Description: MOSFET, N, SOT-23

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Docket:
Si2302ADS
Vishay Siliconix
N-Channel 2.5-V (G-S) MOSFET
PRODUCT SUMMARY
VDS (V) 20 RDS(on) () 0.060 at VGS = 4.5 V 0.115 at VGS = 2.5 V ID (A) 2.4 2.0

Specifications:

• Continuous Drain Current Id: 2.4 A
• Current Id Max: 2.1 A
• Drain Source Voltage Vds: 20 V
• Mounting Type: SMD
• Number of Pins: 3
• On Resistance Rds(on): 60 MOhm
• Package / Case: SOT-23
• Power Dissipation Pd: 1.25 W
• Rds(on) Test Voltage Vgs: 4.5 V
• Threshold Voltage Vgs Typ: 950 mV
• Transistor Case Style: SOT-23
• Transistor Polarity: N Channel
• Voltage Vds Typ: 20 V
• Voltage Vgs Max: 950 mV
• Voltage Vgs Rds on Measurement: 4.5 V

RoHS: Yes

Andere Namen:

SI2302ADST1E3, SI2302ADS T1 E3