Datasheet SI2307BDS-T1-GE3 - Vishay MOSFET, P, SOT-23 — Datenblatt

Detaillierte Beschreibung

Manufacturer: Vishay

Description: MOSFET, P, SOT-23

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Docket:
Si2307BDS
Vishay Siliconix
P-Channel 30-V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V) - 30 RDS(on) () 0.078 at VGS = - 10 V 0.130 at VGS = - 4.5 V ID (A)b - 3.2 - 2.5

Specifications:

• Continuous Drain Current Id: 3.2 A
• Current Id Max: -2.5 A
• Drain Source Voltage Vds: -30 V
• Junction Temperature Tj Max: 150°C
• Mounting Type: SMD
• On State Resistance: 78 MOhm
• Operating Temperature Range: -55°C to +150°C
• Package / Case: SOT-23
• Power Dissipation Pd: 750 mW
• Rds(on) Test Voltage Vgs: -10 V
• Rise Time: 12 ns
• Transistor Case Style: SOT-23
• Transistor Polarity: P Channel
• Voltage Vds Typ: 30 V
• Voltage Vgs Max: -20 V
• Voltage Vgs Rds on Measurement: 10 V
• Voltage Vgs th Max: 3 V
• Voltage Vgs th Min: 1 V

RoHS: Yes

Accessories:

• Panasonic - EYGA091203SM
• Panasonic - EYGA121807A

Andere Namen:

SI2307BDST1GE3, SI2307BDS T1 GE3