Datasheet SIA433EDJ-T1-GE3 - Vishay P CH MOSFET — Datenblatt

Vishay SIA433EDJ-T1-GE3

Part Number: SIA433EDJ-T1-GE3

Detaillierte Beschreibung

Manufacturer: Vishay

Description: P CH MOSFET

data sheetDownload Data Sheet

Docket:
New Product
SiA433EDJ
Vishay Siliconix
P-Channel 20-V (D-S) MOSFET
PRODUCT SUMMARY

Specifications:

  • Continuous Drain Current Id: -12 A
  • Drain Source Voltage Vds: -20 V
  • On Resistance Rds(on): 18 MOhm
  • Power Dissipation Pd: 3.5 W
  • Rds(on) Test Voltage Vgs: -4.5 V
  • Threshold Voltage Vgs Typ: -500 mV
  • Transistor Polarity: P Channel

RoHS: Yes

Andere Namen:

SIA433EDJT1GE3, SIA433EDJ T1 GE3