Datasheet SIA417DJ-T1-GE3 - Vishay P CHANNEL MOSFET, -8 V, 12 A, SC-70 — Datenblatt

Vishay SIA417DJ-T1-GE3

Part Number: SIA417DJ-T1-GE3

Detaillierte Beschreibung

Manufacturer: Vishay

Description: P CHANNEL MOSFET, -8 V, 12 A, SC-70

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Docket:
New Product
SiA417DJ
Vishay Siliconix
P-Channel 8-V (D-S) MOSFET
PRODUCT SUMMARY

Simulation ModelSimulation Model

Specifications:

  • Continuous Drain Current, Id: -12 A
  • Drain Source Voltage, Vds: -8 V
  • On Resistance, Rds(on): 0.095 Ohm
  • Rds(on) Test Voltage, Vgs: 5 V
  • Threshold Voltage, Vgs Typ: -1 V
  • Transistor Polarity: P Channel

RoHS: Yes

Andere Namen:

SIA417DJT1GE3, SIA417DJ T1 GE3