Datasheet SI7726DN-T1-GE3 - Vishay N CHANNEL MOSFET, 30 V, 35 A POWERPAK — Datenblatt

Detaillierte Beschreibung

Manufacturer: Vishay

Description: N CHANNEL MOSFET, 30 V, 35 A POWERPAK

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Docket:
Si7726DN
Vishay Siliconix
N-Channel 30-V (D-S) MOSFET with Schottky Diode
PRODUCT SUMMARY
VDS (V) 30 RDS(on) () 0.0095 at VGS = 10 V 0.0125 at VGS = 4.5 V ID (A)e 35 35 Qg (Typ.) 12.5 nC

Simulation Model

Specifications:

• Continuous Drain Current Id: 35 A
• Drain Source Voltage Vds: 30 V
• On Resistance Rds(on): 12.5 MOhm
• Rds(on) Test Voltage Vgs: 20 V
• Transistor Polarity: N Channel + Schottky Diode

RoHS: Y-Ex

Andere Namen:

SI7726DNT1GE3, SI7726DN T1 GE3