Datasheet SI6433BDQ-T1-GE3 - Vishay P CHANNEL MOSFET, -12 V, 4.8 A, TSSOP — Datenblatt

Detaillierte Beschreibung

Manufacturer: Vishay

Description: P CHANNEL MOSFET, -12 V, 4.8 A, TSSOP

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Docket:
Si6433BDQ
Vishay Siliconix
P-Channel 2.5-V (G-S) MOSFET
PRODUCT SUMMARY
VDS (V) - 12 RDS(on) () 0.040 at VGS = - 4.5 V 0.070 at VGS = - 2.5 V ID (A) - 4.8 - 3.6

Simulation Model

Specifications:

• Continuous Drain Current, Id: -4.8 A
• Drain Source Voltage, Vds: -12 V
• On Resistance, Rds(on): 0.07 Ohm
• Rds(on) Test Voltage, Vgs: 8 V
• Threshold Voltage, Vgs Typ: -1.5 V
• Transistor Polarity: P Channel

RoHS: Y-Ex

Andere Namen:

SI6433BDQT1GE3, SI6433BDQ T1 GE3