Datasheet SI4825DY-T1-E3 - Vishay MOSFET, P CH, 30 V, 8.1 A, 8SOIC — Datenblatt

Detaillierte Beschreibung

Manufacturer: Vishay

Description: MOSFET, P CH, 30 V, 8.1 A, 8SOIC

Download Data Sheet

Specifications:

• Continuous Drain Current Id: -8.1 A
• Drain Source Voltage Vds: -30 V
• Number of Pins: 8
• On Resistance Rds(on): 0.012 Ohm
• Operating Temperature Range: -55°C to +150°C
• Power Dissipation: -1.5 W
• Rds(on) Test Voltage Vgs: -10 V
• Transistor Case Style: SOIC
• Transistor Polarity: P Channel
• RoHS: Y-Ex

Andere Namen:

SI4825DYT1E3, SI4825DY T1 E3