Datasheet SI4463BDY-T1-GE3 - Vishay P CHANNEL MOSFET, -20 V, 13.7 A, SOIC — Datenblatt

Detaillierte Beschreibung

Manufacturer: Vishay

Description: P CHANNEL MOSFET, -20 V, 13.7 A, SOIC

Specifications:

• Continuous Drain Current Id: 13.7 A
• Drain Source Voltage Vds: -20 V
• On Resistance Rds(on): 20 MOhm
• Rds(on) Test Voltage Vgs: -2.5 V
• Threshold Voltage Vgs Typ: -1.4 V
• Transistor Polarity: P Channel

RoHS: Y-Ex

Andere Namen:

SI4463BDYT1GE3, SI4463BDY T1 GE3