Datasheet SI4447DY-T1-E3 - Vishay P CHANNEL MOSFET, -40 V, 4.5 A, SOIC — Datenblatt

Detaillierte Beschreibung

Manufacturer: Vishay

Description: P CHANNEL MOSFET, -40 V, 4.5 A, SOIC

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Docket:
Si4447DY
Vishay Siliconix
P-Channel 40-V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V) - 40 RDS(on) () 0.054 at VGS = - 10 V 0.072 at VGS = - 4.5 V ID (A) - 4.5 - 3.9 Qg (Typ.) 9

Simulation Model

Specifications:

• Continuous Drain Current Id: -4.5 A
• Drain Source Voltage Vds: -40 V
• On Resistance Rds(on): 72 MOhm
• Rds(on) Test Voltage Vgs: 16 V
• Threshold Voltage Vgs Typ: -2.2 V
• Transistor Polarity: P Channel

RoHS: Y-Ex

Andere Namen:

SI4447DYT1E3, SI4447DY T1 E3