Datasheet SI4431BDY-T1-GE3 - Vishay P CH MOSFET — Datenblatt

Detaillierte Beschreibung

Manufacturer: Vishay

Description: P CH MOSFET

Specifications:

• Continuous Drain Current Id: -5.7 A
• Drain Source Voltage Vds: -30 V
• On Resistance Rds(on): 23 MOhm
• Power Dissipation Pd: 1.5 W
• Rds(on) Test Voltage Vgs: -10 V
• Threshold Voltage Vgs Typ: -3 V
• Transistor Polarity: P Channel

RoHS: Yes

Andere Namen:

SI4431BDYT1GE3, SI4431BDY T1 GE3