Datasheet SI4425BDY-T1-E3 - Vishay MOSFET, P CH, 30 V, 8.8 A, 8SOIC — Datenblatt

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Manufacturer: Vishay

Description: MOSFET, P CH, 30 V, 8.8 A, 8SOIC

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Docket:
Si4425BDY
Vishay Siliconix
P-Channel 30-V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V) - 30 RDS(on) () 0.012 at VGS = - 10 V 0.019 at VGS = - 4.5 V ID (A) - 11.4 - 9.1

Specifications:

• Continuous Drain Current Id: -8.8 A
• Drain Source Voltage Vds: -30 V
• Number of Pins: 8
• On Resistance Rds(on): 0.01 Ohm
• Operating Temperature Range: -55°C to +150°C
• Power Dissipation: 1.5 W
• Rds(on) Test Voltage Vgs: -10 V
• Transistor Case Style: SOIC
• Transistor Polarity: P Channel
• RoHS: Yes

Andere Namen:

SI4425BDYT1E3, SI4425BDY T1 E3