Datasheet SI3851DV-T1-GE3 - Vishay P CHANNEL MOSFET, -30 V, 1.8 A — Datenblatt

Detaillierte Beschreibung

Manufacturer: Vishay

Description: P CHANNEL MOSFET, -30 V, 1.8 A

Specifications:

• Continuous Drain Current, Id: 1.8 A
• Drain Source Voltage, Vds: -30 V
• On Resistance, Rds(on): 0.2 Ohm
• Rds(on) Test Voltage, Vgs: -10 V
• Transistor Polarity: P Channel / Schottky Diode

RoHS: Yes

Andere Namen:

SI3851DVT1GE3, SI3851DV T1 GE3