Datasheet SI3812DV-T1-GE3 - Vishay N CHANNEL MOSFET, 20 V, 2.4 A, TSOP — Datenblatt

Vishay SI3812DV-T1-GE3

Part Number: SI3812DV-T1-GE3

Detaillierte Beschreibung

Manufacturer: Vishay

Description: N CHANNEL MOSFET, 20 V, 2.4 A, TSOP

data sheetDownload Data Sheet

Docket:
Si3812DV
Vishay Siliconix
N-Channel 20-V (D-S) MOSFET with Schottky Diode
MOSFET PRODUCT SUMMARY
VDS (V) 20 RDS(on) () 0.125 at VGS = 4.5 V 0.200 at VGS = 2.5 V ID (A) 2.4 1.8

Specifications:

  • Continuous Drain Current Id: 2.4 A
  • Drain Source Voltage Vds: 20 V
  • On Resistance Rds(on): 125 MOhm
  • Rds(on) Test Voltage Vgs: 4.5 V
  • Transistor Polarity: N Channel + Schottky Diode

RoHS: Yes

Andere Namen:

SI3812DVT1GE3, SI3812DV T1 GE3