Datasheet SI3433BDV-T1-GE3 - Vishay P CHANNEL MOSFET, -20 V, 4.3 A, TSOP — Datenblatt

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Manufacturer: Vishay

Description: P CHANNEL MOSFET, -20 V, 4.3 A, TSOP

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Docket:
Si3433BDV
Vishay Siliconix
P-Channel 1.8-V (G-S) MOSFET
PRODUCT SUMMARY
VDS (V) RDS(on) () 0.042 at VGS = - 4.5 V - 20 0.057 at VGS = - 2.5 V 0.080 at VGS = - 1.8 V ID (A) - 5.6 - 4.8 - 4.1

Specifications:

• Continuous Drain Current Id: -4.3 A
• Drain Source Voltage Vds: -20 V
• On Resistance Rds(on): 42 MOhm
• Rds(on) Test Voltage Vgs: -4.5 V
• Threshold Voltage Vgs Typ: -450 mV
• Transistor Polarity: P Channel

RoHS: Yes

Andere Namen:

SI3433BDVT1GE3, SI3433BDV T1 GE3