Datasheet SI2367DS-T1-GE3 - Vishay P CHANNEL MOSFET, -20 V, 3.8 A — Datenblatt

Detaillierte Beschreibung

Manufacturer: Vishay

Description: P CHANNEL MOSFET, -20 V, 3.8 A

Specifications:

• Continuous Drain Current, Id: -3.8 A
• Drain Source Voltage, Vds: -20 V
• On Resistance, Rds(on): 0.066 Ohm
• Rds(on) Test Voltage, Vgs: 4.5 V
• Threshold Voltage, Vgs Typ: -0.4 V
• Transistor Polarity: P Channel

RoHS: Yes

Andere Namen:

SI2367DST1GE3, SI2367DS T1 GE3