Datasheet SI2351DS-T1-E3 - Vishay MOSFET, P CH, 20 V, 3 A, TO-236 — Datenblatt

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Manufacturer: Vishay

Description: MOSFET, P CH, 20 V, 3 A, TO-236

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Docket:
Si2351DS
Vishay Siliconix
P-Channel 20-V (D-S) MOSFET
MOSFET PRODUCT SUMMARY
VDS (V) - 20 RDS(on) () 0.115 at VGS = - 4.5 V 0.205 at VGS = - 2.5 V ID (A)a - 3.0 3.2 nC - 2.2 Qg (Typ.)

Specifications:

• Continuous Drain Current Id: -2.8 A
• Drain Source Voltage Vds: -20 V
• Number of Pins: 3
• On Resistance Rds(on): 0.092 Ohm
• Operating Temperature Range: -55°C to +150°C
• Power Dissipation: 1 W
• Rds(on) Test Voltage Vgs: -4.5 V
• Transistor Case Style: TO-236
• Transistor Polarity: P Channel
• RoHS: Yes

Andere Namen:

SI2351DST1E3, SI2351DS T1 E3