Datasheet SI2325DS-T1-E3 - Vishay MOSFET, P CH, 150 V, 0.69 A, TO-236 — Datenblatt

Detaillierte Beschreibung

Manufacturer: Vishay

Description: MOSFET, P CH, 150 V, 0.69 A, TO-236

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Docket:
Si2325DS
Vishay Siliconix
P-Channel 150-V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V) - 150 RDS(on) () 1.2 at VGS = - 10 V 1.3 at VGS = - 6.0 V ID (A) - 0.69 - 0.66 Qg (Typ.) 7.7

Specifications:

• Continuous Drain Current Id: -530 mA
• Drain Source Voltage Vds: -150 V
• Number of Pins: 3
• On Resistance Rds(on): 1 Ohm
• Operating Temperature Range: -55°C to +150°C
• Power Dissipation: 750 mW
• Rds(on) Test Voltage Vgs: -10 V
• Transistor Case Style: TO-236
• Transistor Polarity: P Channel
• RoHS: Yes

Andere Namen:

SI2325DST1E3, SI2325DS T1 E3