Datasheet SI2319DS-T1-GE3 - Vishay P CH MOSFET — Datenblatt

Detaillierte Beschreibung

Manufacturer: Vishay

Description: P CH MOSFET

Specifications:

• Continuous Drain Current Id: -2.3 A
• Drain Source Voltage Vds: -40 V
• On Resistance Rds(on): 65 MOhm
• Power Dissipation Pd: 750 mW
• Rds(on) Test Voltage Vgs: -10 V
• Threshold Voltage Vgs Typ: -3 V
• Transistor Polarity: P Channel

RoHS: Yes

Andere Namen:

SI2319DST1GE3, SI2319DS T1 GE3