Datasheet SI2315BDS-T1-GE3 - Vishay P CH MOSFET — Datenblatt

Detaillierte Beschreibung

Manufacturer: Vishay

Description: P CH MOSFET

Specifications:

• Continuous Drain Current Id: -3 A
• Drain Source Voltage Vds: -12 V
• On Resistance Rds(on): 40 MOhm
• Power Dissipation Pd: 750 mW
• Rds(on) Test Voltage Vgs: -4.5 V
• Threshold Voltage Vgs Typ: -900 mV
• Transistor Polarity: P Channel

RoHS: Yes

Andere Namen:

SI2315BDST1GE3, SI2315BDS T1 GE3