Datasheet SI2307BDS-T1-E3 - Vishay P CH MOSFET — Datenblatt

Detaillierte Beschreibung

Manufacturer: Vishay

Description: P CH MOSFET

Specifications:

• Continuous Drain Current Id: -3.2 A
• Drain Source Voltage Vds: -30 V
• On Resistance Rds(on): 130 MOhm
• Power Dissipation Pd: 1.25 W
• Rds(on) Test Voltage Vgs: -10 V
• Threshold Voltage Vgs Typ: -1 V
• Transistor Polarity: P Channel

RoHS: Yes

Andere Namen:

SI2307BDST1E3, SI2307BDS T1 E3