Datasheet SI2305ADS-T1-GE3 - Vishay P CHANNEL MOSFET, -8 V, 4.1 A, TO-236 — Datenblatt

Detaillierte Beschreibung

Manufacturer: Vishay

Description: P CHANNEL MOSFET, -8 V, 4.1 A, TO-236

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Docket:
New Product
Si2305ADS
Vishay Siliconix
P-Channel 8-V (D-S) MOSFET
FEATURES

Simulation Model

Specifications:

• Continuous Drain Current Id: -4.1 A
• Drain Source Voltage Vds: -8 V
• On Resistance Rds(on): 88 MOhm
• Rds(on) Test Voltage Vgs: 8 V
• Threshold Voltage Vgs Typ: -800 mV
• Transistor Polarity: P Channel

RoHS: Yes

Andere Namen:

SI2305ADST1GE3, SI2305ADS T1 GE3