Datasheet SI2301BDS-T1-GE3 - Vishay P CH MOSFET — Datenblatt

Detaillierte Beschreibung

Manufacturer: Vishay

Description: P CH MOSFET

Specifications:

• Continuous Drain Current Id: -2.2 A
• Drain Source Voltage Vds: -20 V
• On Resistance Rds(on): 80 MOhm
• Power Dissipation Pd: 700 mW
• Rds(on) Test Voltage Vgs: -4.5 V
• Threshold Voltage Vgs Typ: -950 mV
• Transistor Polarity: P Channel

RoHS: Yes

Andere Namen:

SI2301BDST1GE3, SI2301BDS T1 GE3