Datasheet SIS407DN-T1-GE3 - Vishay MOSFET, P CH, DIODE, 20 V, 25 A, PPAK1212-8 — Datenblatt

Detaillierte Beschreibung

Manufacturer: Vishay

Description: MOSFET, P CH, DIODE, 20 V, 25 A, PPAK1212-8

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Docket:
New Product
SiS407DN
Vishay Siliconix
P-Channel 20 V (D-S) MOSFET
FEATURES

Specifications:

• Current Id Max: -15.4 A
• Drain Source Voltage Vds: -20 V
• Number of Pins: 8
• On State Resistance: 8200µ Ohm
• Operating Temperature Range: -55°C to +150°C
• Power Dissipation Pd: 3.6 W
• Rds(on) Test Voltage Vgs: -4.5 V
• Transistor Case Style: PowerPAK 1212
• Transistor Polarity: P Channel
• Voltage Vgs Max: -8 V

RoHS: Yes

Accessories:

• CHEMTRONICS - CW8400
• Electrolube - SMA10SL

Andere Namen:

SIS407DNT1GE3, SIS407DN T1 GE3