Datasheet SI7489DP-T1-E3 - Vishay MOSFET, P, PPAK SO-8 — Datenblatt

Detaillierte Beschreibung

Manufacturer: Vishay

Description: MOSFET, P, PPAK SO-8

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Docket:
Si7489DP
Vishay Siliconix
P-Channel 100-V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V) - 100 RDS(on) () 0.041 at VGS = - 10 V 0.047 at VGS = - 4.5 V ID (A)a - 28 - 28 Qg (Typ.) 54 nC

Specifications:

• Continuous Drain Current Id: 28 A
• Current Id Max: -28 A
• Drain Source Voltage Vds: -100 V
• Junction Temperature Tj Max: 150°C
• Mounting Type: SMD
• Number of Pins: 8
• On State Resistance: 41 MOhm
• Operating Temperature Range: -55°C to +150°C
• Package / Case: PowerPAK
• Power Dissipation Pd: 83 W
• Rds(on) Test Voltage Vgs: 20 V
• Rise Time: 20 ns
• Threshold Voltage Vgs Typ: -3 V
• Transistor Case Style: PowerPAK SO
• Transistor Polarity: P Channel
• Voltage Vds Typ: 100 V
• Voltage Vgs Max: -3 V
• Voltage Vgs Rds on Measurement: 10 V
• Voltage Vgs th Max: 3 V
• Voltage Vgs th Min: 1 V

RoHS: Yes

Accessories:

• Panasonic - EYGA091203SM
• Panasonic - EYGA121807A

Andere Namen:

SI7489DPT1E3, SI7489DP T1 E3