Datasheet SI7463DP-T1-E3 - Vishay MOSFET, P — Datenblatt

Detaillierte Beschreibung

Manufacturer: Vishay

Description: MOSFET, P

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Specifications:

• Continuous Drain Current Id: 18.6 A
• Current Id Max: -18.6 A
• Drain Source Voltage Vds: -40 V
• Junction Temperature Tj Max: 150°C
• Mounting Type: SMD
• Number of Pins: 8
• On Resistance Rds(on): 9.2 MOhm
• Operating Temperature Range: -55°C to +150°C
• Package / Case: PowerPAK
• Power Dissipation: 1.9 W
• Rds(on) Test Voltage Vgs: 20 V
• Rise Time: 25 ns
• SVHC: No SVHC (20-Jun-2011)
• Threshold Voltage Vgs Typ: -3 V
• Transistor Case Style: PowerPAK SO
• Transistor Polarity: P Channel
• Voltage Vds Typ: 40 V
• Voltage Vgs Max: -3 V
• Voltage Vgs Rds on Measurement: 10 V
• Voltage Vgs th Max: 3 V
• Voltage Vgs th Min: 1 V

RoHS: Yes

Andere Namen:

SI7463DPT1E3, SI7463DP T1 E3