Datasheet SI7121DN-T1-GE3 - Vishay MOSFET, P, PPAK1212 — Datenblatt

Vishay SI7121DN-T1-GE3

Part Number: SI7121DN-T1-GE3

Detaillierte Beschreibung

Manufacturer: Vishay

Description: MOSFET, P, PPAK1212

data sheetDownload Data Sheet

Docket:
New Product
Si7121DN
Vishay Siliconix
P-Channel 30-V (D-S) MOSFET
FEATURES

Specifications:

  • Continuous Drain Current Id: 16 A
  • Current Id Max: -16 A
  • Drain Source Voltage Vds: -30 V
  • Junction Temperature Tj Max: 150°C
  • Mounting Type: SMD
  • Number of Pins: 8
  • On Resistance Rds(on): 18 MOhm
  • Operating Temperature Range: -55°C to +150°C
  • Package / Case: PowerPAK
  • Power Dissipation: 52 W
  • Rds(on) Test Voltage Vgs: 25 V
  • Rise Time: 13 ns
  • SVHC: No SVHC (20-Jun-2011)
  • Threshold Voltage Vgs Typ: -3 V
  • Transistor Case Style: PowerPAK 1212
  • Transistor Polarity: P Channel
  • Voltage Vds Typ: 30 V
  • Voltage Vgs Max: -3 V
  • Voltage Vgs Rds on Measurement: 10 V
  • Voltage Vgs th Max: 3 V
  • Voltage Vgs th Min: 1 V

RoHS: Yes

Andere Namen:

SI7121DNT1GE3, SI7121DN T1 GE3