Datasheet SI4825DDY-T1-GE3 - Vishay MOSFET, P CH, DIODE, 30 V, 14.9 A, 8-SOIC — Datenblatt

Vishay SI4825DDY-T1-GE3

Part Number: SI4825DDY-T1-GE3

Detaillierte Beschreibung

Manufacturer: Vishay

Description: MOSFET, P CH, DIODE, 30 V, 14.9 A, 8-SOIC

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Docket:
New Product
Si4825DDY
Vishay Siliconix
P-Channel 30-V (D-S) MOSFET
FEATURES PRODUCT SUMMARY

Specifications:

  • Current Id Max: -10.9 A
  • Drain Source Voltage Vds: -30 V
  • Number of Pins: 8
  • On State Resistance: 0.01 Ohm
  • Operating Temperature Range: -55°C to +150°C
  • Power Dissipation Pd: 2.7 W
  • Rds(on) Test Voltage Vgs: -10 V
  • Transistor Case Style: SOIC
  • Transistor Polarity: P Channel
  • Voltage Vgs Max: -25 V

RoHS: Yes

Accessories:

  • Electrolube - SMA10SL
  • Fischer Elektronik - FK 244 13 D2 PAK

Andere Namen:

SI4825DDYT1GE3, SI4825DDY T1 GE3