Datasheet SI4463BDY-T1-E3 - Vishay MOSFET, P, SOIC — Datenblatt

Detaillierte Beschreibung

Manufacturer: Vishay

Description: MOSFET, P, SOIC

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Specifications:

• Base Number: 4463
• Continuous Drain Current Id: 9.8 A
• Current Id Max: 13.7 A
• Drain Source Voltage Vds: 20 V
• Mounting Type: SMD
• Number of Pins: 8
• On State Resistance @ Vgs = 2.5V: 20 MOhm
• On State Resistance @ Vgs = 4.5V: 14 MOhm
• On State Resistance: 110 MOhm
• On State resistance @ Vgs = 10V: 11 MOhm
• Operating Temperature Range: -55°C to +150°C
• P Channel Gate Charge: 37nC
• Package / Case: SOIC
• Power Dissipation Pd: 1.5 W
• Rds(on) Test Voltage Vgs: 12 V
• Threshold Voltage Vgs Typ: -1.4 V
• Transistor Case Style: SOIC
• Transistor Polarity: P Channel
• Voltage Vds Typ: -20 V
• Voltage Vgs Max: -1.4 V
• Voltage Vgs Rds on Measurement: -10 V

RoHS: Yes

Accessories:

• Panasonic - EYGA091203SM
• Panasonic - EYGA121807A
• Roth Elektronik - RE932-01

Andere Namen:

SI4463BDYT1E3, SI4463BDY T1 E3