Datasheet SI4431CDY-T1-GE3 - Vishay P CHANNEL MOSFET, -30 V, 9 A, SOIC — Datenblatt

Detaillierte Beschreibung

Manufacturer: Vishay

Description: P CHANNEL MOSFET, -30 V, 9 A, SOIC

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Docket:
New Product
Si4431CDY
Vishay Siliconix
P-Channel 30-V (D-S) MOSFET
FEATURES

Simulation Model

Specifications:

• Continuous Drain Current Id: -9 A
• Drain Source Voltage Vds: -30 V
• On Resistance Rds(on): 0.049 Ohm
• Rds(on) Test Voltage Vgs: 20 V
• Threshold Voltage Vgs Typ: -2.5 V
• Transistor Polarity: P Channel

RoHS: Y-Ex

Andere Namen:

SI4431CDYT1GE3, SI4431CDY T1 GE3