Datasheet SI2351DS-T1-GE3 - Vishay MOSFET, P CH, 20 V, 2.8 A, SOT23-3 — Datenblatt

Detaillierte Beschreibung

Manufacturer: Vishay

Description: MOSFET, P CH, 20 V, 2.8 A, SOT23-3

Download Data Sheet

Docket:
Si2351DS
Vishay Siliconix
P-Channel 20-V (D-S) MOSFET
MOSFET PRODUCT SUMMARY
VDS (V) - 20 RDS(on) () 0.115 at VGS = - 4.5 V 0.205 at VGS = - 2.5 V ID (A)a - 3.0 3.2 nC - 2.2 Qg (Typ.)

Specifications:

• Current Id Max: -2.2 A
• Drain Source Voltage Vds: -20 V
• Number of Pins: 3
• On State Resistance: 92 MOhm
• Operating Temperature Range: -55°C to +150°C
• Power Dissipation Pd: 1 W
• Rds(on) Test Voltage Vgs: -4.5 V
• Transistor Case Style: SOT-23
• Transistor Polarity: P Channel
• Voltage Vgs Max: -12 V

RoHS: Yes

Accessories:

• CHEMTRONICS - CW8400
• EREM - 00SA
• MULTICORE (SOLDER) - 698840
• Roth Elektronik - RE901

Andere Namen:

SI2351DST1GE3, SI2351DS T1 GE3