Datasheet SI2315BDS-T1-E3 - Vishay MOSFET, P, SOT-23 — Datenblatt

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Manufacturer: Vishay

Description: MOSFET, P, SOT-23

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Docket:
Si2315BDS
Vishay Siliconix
P-Channel 1.8-V (G-S) MOSFET
PRODUCT SUMMARY
VDS (V) - 12 RDS(on) () 0.050 at VGS = - 4.5 V 0.065 at VGS = - 2.5 V 0.100 at VGS = - 1.8V ID (A) - 3.85 - 3.4 - 2.7

Specifications:

• Continuous Drain Current Id: -3.85 A
• Current Id Max: -3 A
• Drain Source Voltage Vds: -12 V
• Mounting Type: SMD
• Number of Pins: 3
• On Resistance Rds(on): 50 MOhm
• Package / Case: SOT-23
• Power Dissipation: 770 mW
• Rds(on) Test Voltage Vgs: -4.5 V
• Threshold Voltage Vgs Typ: -900 mV
• Transistor Case Style: SOT-23
• Transistor Polarity: P Channel
• Voltage Vds Typ: -12 V
• Voltage Vgs Max: 8 V
• Voltage Vgs Rds on Measurement: -4.5 V

RoHS: Yes

Andere Namen:

SI2315BDST1E3, SI2315BDS T1 E3